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dc.contributor.authorHui, Rongqing
dc.contributor.authorTaherion, S.
dc.contributor.authorWan, Yueting
dc.contributor.authorLi, Jilu
dc.contributor.authorJin, Sixuan
dc.contributor.authorLin, J. Y.
dc.contributor.authorJiang, Hongxing
dc.date.accessioned2015-11-13T21:20:00Z
dc.date.available2015-11-13T21:20:00Z
dc.date.issued2003
dc.identifier.citationHui, R., S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang. "GaN-based Waveguide Devices for Long-wavelength Optical Communications." Appl. Phys. Lett. Applied Physics Letters 82.9 (2003): 1326. http://dx.doi.org/10.1063/1.1557790en_US
dc.identifier.urihttp://hdl.handle.net/1808/18911
dc.descriptionThis is the published version. Copyright © 2003 American Institute of Physicsen_US
dc.description.abstractRefractive indices of AlxGa1−xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguidedevices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed.en_US
dc.publisherAmerican Institute of Physicsen_US
dc.subjectIII-V semiconductorsen_US
dc.titleGaN-based waveguide devices for long-wavelength optical communicationsen_US
dc.typeArticle
kusw.kuauthorHui, Rongqing
kusw.kudepartmentElectrical Engr & Comp Scienceen_US
dc.identifier.doi10.1063/1.1557790
kusw.oaversionScholarly/refereed, publisher version
kusw.oapolicyThis item does not meet KU Open Access policy criteria.
dc.rights.accessrightsopenAccess


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