dc.contributor.author | Hui, Rongqing | |
dc.contributor.author | Taherion, S. | |
dc.contributor.author | Wan, Yueting | |
dc.contributor.author | Li, Jilu | |
dc.contributor.author | Jin, Sixuan | |
dc.contributor.author | Lin, J. Y. | |
dc.contributor.author | Jiang, Hongxing | |
dc.date.accessioned | 2015-11-13T21:20:00Z | |
dc.date.available | 2015-11-13T21:20:00Z | |
dc.date.issued | 2003 | |
dc.identifier.citation | Hui, R., S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang. "GaN-based Waveguide Devices for Long-wavelength Optical Communications." Appl. Phys. Lett. Applied Physics Letters 82.9 (2003): 1326. http://dx.doi.org/10.1063/1.1557790 | en_US |
dc.identifier.uri | http://hdl.handle.net/1808/18911 | |
dc.description | This is the published version. Copyright © 2003 American Institute of Physics | en_US |
dc.description.abstract | Refractive indices of AlxGa1−xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguidedevices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed. | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.subject | III-V semiconductors | en_US |
dc.title | GaN-based waveguide devices for long-wavelength optical communications | en_US |
dc.type | Article | |
kusw.kuauthor | Hui, Rongqing | |
kusw.kudepartment | Electrical Engr & Comp Science | en_US |
dc.identifier.doi | 10.1063/1.1557790 | |
kusw.oaversion | Scholarly/refereed, publisher version | |
kusw.oapolicy | This item does not meet KU Open Access policy criteria. | |
dc.rights.accessrights | openAccess | |