GaN-based waveguide devices for long-wavelength optical communications
Issue Date
2003Article Version
Scholarly/refereed, publisher version
Published Version
doi:10.1063/1.1557790Metadata
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Refractive indices of AlxGa1−xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguidedevices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed.
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This is the published version. Copyright © 2003 American Institute of Physics
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Citation
Hui, R., S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang. "GaN-based Waveguide Devices for Long-wavelength Optical Communications." Appl. Phys. Lett. Applied Physics Letters 82.9 (2003): 1326. http://dx.doi.org/10.1063/1.1557790
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