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Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

dc.contributor.authorWang, Q.
dc.contributor.authorDahal, R.
dc.contributor.authorFeng, I. W.
dc.contributor.authorLin, J. Y.
dc.contributor.authorJiang, Hongxing
dc.contributor.authorHui, Rongqing
dc.date.accessioned2015-11-06T17:36:19Z
dc.date.available2015-11-06T17:36:19Z
dc.date.issued2011
dc.identifier.citationWang, Q., R. Dahal, I.-W. Feng, J. Y. Lin, H. X. Jiang, and R. Hui. "Emission and Absorption Cross-sections of an Er:GaN Waveguide Prepared with Metal Organic Chemical Vapor Deposition." Appl. Phys. Lett. Applied Physics Letters 99.12 (2011): 121106. http://dx.doi.org/10.1063/1.3636418en_US
dc.identifier.urihttp://hdl.handle.net/1808/18846
dc.descriptionThis is the published version. ©Copyright 2011 American Institute of Physicsen_US
dc.description.abstractWe repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber’s theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.en_US
dc.publisherAmerican Institute of Physicsen_US
dc.titleEmission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor depositionen_US
dc.typeArticle
kusw.kuauthorHui, Rongqing
kusw.kudepartmentElectrical Engr & Comp Scienceen_US
dc.identifier.doi10.1063/1.3636418
kusw.oaversionScholarly/refereed, publisher version
kusw.oapolicyThis item meets KU Open Access policy criteria.
dc.rights.accessrightsopenAccess


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