dc.contributor.author | Wang, Q. | |
dc.contributor.author | Dahal, R. | |
dc.contributor.author | Feng, I. W. | |
dc.contributor.author | Lin, J. Y. | |
dc.contributor.author | Jiang, Hongxing | |
dc.contributor.author | Hui, Rongqing | |
dc.date.accessioned | 2015-11-06T17:36:19Z | |
dc.date.available | 2015-11-06T17:36:19Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Wang, Q., R. Dahal, I.-W. Feng, J. Y. Lin, H. X. Jiang, and R. Hui. "Emission and Absorption Cross-sections of an Er:GaN Waveguide Prepared with Metal Organic Chemical Vapor Deposition." Appl. Phys. Lett. Applied Physics Letters 99.12 (2011): 121106. http://dx.doi.org/10.1063/1.3636418 | en_US |
dc.identifier.uri | http://hdl.handle.net/1808/18846 | |
dc.description | This is the published version. ©Copyright 2011 American Institute of Physics | en_US |
dc.description.abstract | We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber’s theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections. | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.title | Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition | en_US |
dc.type | Article | |
kusw.kuauthor | Hui, Rongqing | |
kusw.kudepartment | Electrical Engr & Comp Science | en_US |
dc.identifier.doi | 10.1063/1.3636418 | |
kusw.oaversion | Scholarly/refereed, publisher version | |
kusw.oapolicy | This item meets KU Open Access policy criteria. | |
dc.rights.accessrights | openAccess | |