Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

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Issue Date
2011Author
Wang, Q.
Dahal, R.
Feng, I. W.
Lin, J. Y.
Jiang, Hongxing
Hui, Rongqing
Publisher
American Institute of Physics
Type
Article
Article Version
Scholarly/refereed, publisher version
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Show full item recordAbstract
We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber’s theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.
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This is the published version. ©Copyright 2011 American Institute of Physics
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Citation
Wang, Q., R. Dahal, I.-W. Feng, J. Y. Lin, H. X. Jiang, and R. Hui. "Emission and Absorption Cross-sections of an Er:GaN Waveguide Prepared with Metal Organic Chemical Vapor Deposition." Appl. Phys. Lett. Applied Physics Letters 99.12 (2011): 121106. http://dx.doi.org/10.1063/1.3636418
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