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    Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

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    Wang_vapor_deposition2011.pdf (612.5Kb)
    Issue Date
    2011
    Author
    Wang, Q.
    Dahal, R.
    Feng, I. W.
    Lin, J. Y.
    Jiang, Hongxing
    Hui, Rongqing
    Publisher
    American Institute of Physics
    Type
    Article
    Article Version
    Scholarly/refereed, publisher version
    Metadata
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    Abstract
    We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber’s theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.
    Description
    This is the published version. ©Copyright 2011 American Institute of Physics
    URI
    http://hdl.handle.net/1808/18846
    DOI
    https://doi.org/10.1063/1.3636418
    Collections
    • Electrical Engineering and Computer Science Scholarly Works [302]
    Citation
    Wang, Q., R. Dahal, I.-W. Feng, J. Y. Lin, H. X. Jiang, and R. Hui. "Emission and Absorption Cross-sections of an Er:GaN Waveguide Prepared with Metal Organic Chemical Vapor Deposition." Appl. Phys. Lett. Applied Physics Letters 99.12 (2011): 121106. http://dx.doi.org/10.1063/1.3636418

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    Contact KU ScholarWorks
    785-864-8983
    KU Libraries
    1425 Jayhawk Blvd
    Lawrence, KS 66045
    785-864-8983

    KU Libraries
    1425 Jayhawk Blvd
    Lawrence, KS 66045
    Image Credits
     

     

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