Exciton diffusion in semiconducting single-walled carbon nanotubes studied by transient absorption microscopy

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Issue Date
2012-11-09Author
Ruzicka, Brian Andrew
Wang, Rui
Lohrman, Jessica
Ren, Shenqiang
Zhao, Hui
Publisher
American Physical Society
Type
Article
Article Version
Scholarly/refereed, publisher version
Metadata
Show full item recordAbstract
Spatiotemporal dynamics of excitons in isolated semiconducting single-walled carbon nanotubes are studied using transient absorption microscopy. Differential reflection and transmission of an 810-nm probe pulse after excitation by a 750-nm pump pulse are measured. We observe a biexponentially decaying signal with a fast time constant of 0.66 ps and a slower time constant of 2.8 ps. Both constants are independent of the pump fluence. By spatially and temporally resolving the differential reflection, we are able to observe a diffusion of excitons, and measure a diffusion coefficient of 200±10 cm2/s at room temperature and 300±10 cm2/s at lower temperatures of 10 K and 150 K.
Description
This is the publisher's version, also available electronically from http://journals.aps.org/prb/abstract/10.1103/PhysRevB.86.205417.
ISSN
1098-0121Collections
Citation
Ruzicka, Brian A. et al. (2012). "Exciton diffusion in semiconducting single-walled carbon nanotubes studied by transient absorption microscopy." Physical Review B, 86(20)205417. http://dx.doi.org/10.1103/PhysRevB.86.205417
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