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dc.contributor.authorHo, Tak-San
dc.contributor.authorHung, Shih-Han
dc.contributor.authorChen, Hsing-Ta
dc.contributor.authorChu, Shih-I
dc.date.accessioned2014-12-04T17:37:50Z
dc.date.available2014-12-04T17:37:50Z
dc.date.issued2009-06-22
dc.identifier.citationHo, Tak-San., Hung, Shih-Han., Chen, Hsing-Ta., Chu, Shih-I. "Memory effect on the multiphoton coherent destruction of tunneling in the electron transport of nanoscale systems driven by a periodic field: A generalized Floquet approach." Phys. Rev. B 79, 235323 – Published 22 June 2009. http://dx.doi.org/10.1103/PhysRevB.79.235323.
dc.identifier.urihttp://hdl.handle.net/1808/16032
dc.descriptionThis is the published version, also available here: http://dx.doi.org/10.1103/PhysRevB.79.235323.
dc.description.abstractTime-dependent electron-transport processes are often studied in the wide-band limit. In this paper, a generalized Floquet approach beyond the wide-band limit is developed for the general treatment of memory effect on the virtually unexplored multiphoton (MP) coherent destruction of tunneling (CDT) phenomenon of periodically driven electrode-wire-electrode nanoscale systems. As a case study, we apply the approach for a detailed analysis of the electron-transport dc current in the electrode-quantum double dot-electrode system, showing the significance of memory effect as well as illustrating the origin of the MP-CDT phenomenon.
dc.publisherAmerican Physical Society
dc.titleMemory effect on the multiphoton coherent destruction of tunneling in the electron transport of nanoscale systems driven by a periodic field: A generalized Floquet approach
dc.typeArticle
kusw.kuauthorChu, Shih-I
kusw.kudepartmentChemistry
kusw.oastatusfullparticipation
dc.identifier.doi10.1103/PhysRevB.79.235323
kusw.oaversionScholarly/refereed, publisher version
kusw.oapolicyThis item meets KU Open Access policy criteria.
dc.rights.accessrightsopenAccess


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