BALLISTIC CARRIER TRANSPORT IN SEMICONDUCTORS STUDIED BY ULTRAFAST LASER TECHNIQUES

Abstract

Abstract Exploring the spin degree of freedom of electrons has been recognized as a promising solution to several limitations in semiconductor device industry. Injection, transport, detection and manipulation of "spin" in materials are the key elements of this new electronic technology, known as spintronics. Despite the extensive efforts in recent years, there are still significant challenges and spintronics is still in the research phase. This dissertation is devoted to study one of these key processes: spin transport. We used quantum interference and control technique to inject spin currents. Two techniques are developed to detect the spin transport, namely a pump probe technique and a second-harmonic generation technique. Spin transport in several materials and structures are studied, including GaAs bulk, quantum wells, and germanium wafers. We observed the intrinsic inverse spin-Hall effect by time-resolving the ballistic spin and charge transport. We found that the Hall current appeared before the first scattering event. We discovered a new nonlinear optical effect, second-harmonic generation, induced by the pure spin current, and demonstrated that it can be used to directly detect pure spin currents. We have also discovered a charge-current-induced second-harmonic generation process, and used it to study plasma oscillation in GaAs. Finally, we also attempted to observe the second harmonic generation induced by spin polarized and spin unpolarized carrier populations. We did not observe a significant change in the observed second harmonic generation induced by spin polarized and spin unpolarized carrier populations.