| dc.contributor.author | Zhao, Hui | |
| dc.date.accessioned | 2011-03-17T15:13:23Z | |
| dc.date.available | 2011-03-17T15:13:23Z | |
| dc.date.issued | 2008-03 | |
| dc.identifier.citation | Hui Zhao, Temperature dependence of ambipolar diffusion in silicon-on-insulator, Applied Physics Letters 92, 112104 (2008). | |
| dc.identifier.uri | http://hdl.handle.net/1808/7188 | |
| dc.description | Permissions were not obtained for sharing the full text of this article. Full text is available from the American Institute of Physics and from arXiv. See links in this record. | |
| dc.description.abstract | Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned below the bandgap, with 200-fs temporal and 3-micrometer spatial resolution. From sample temperatures of 250 K to 400 K, the ambipolar diffusivity decreases, and is similar to reported values of bulk silicon. Cooling the sample from 250 K to 90 K, a decrease of ambipolar diffusivity is observed, indicating important influences of defects and residual stress on carrier diffusion. No detectable density dependence of ambipolar diffusivity is observed. | |
| dc.language.iso | en | |
| dc.publisher | American Institute of Physics | |
| dc.relation.hasversion | http://arxiv.org/abs/0806.3900 | |
| dc.subject | Materials Science | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Temperature dependence of ambipolar diffusion in silicon-on-insulator | |
| dc.type | Other | |
| kusw.kuauthor | Zhao, Hui | |
| kusw.kudepartment | Physics and Astronomy | |
| kusw.oastatus | publisherdenied | |
| kusw.oapolicy | This item does not meet KU Open Access policy criteria. Publisher denied. | |
| dc.rights.accessrights | openAccess | |
