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    Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

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    Wang_carrier_lifetime2010.pdf (644.4Kb)
    Issue Date
    2010
    Author
    Wang, Q.
    Hui, Rongqing
    Dahal, R.
    Lin, J. Y.
    Jiang, Hongxing
    Publisher
    American Institute of Physics
    Type
    Article
    Article Version
    Scholarly/refereed, publisher version
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    Abstract
    We report the characteristics of an erbium-doped GaNsemiconductorwaveguideamplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the I413/2 and I415/2 energy levels. The carrier lifetime in the I413/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.
    Description
    This is the published version. Copyright 2010 American Institute of Physics
    URI
    http://hdl.handle.net/1808/18906
    DOI
    https://doi.org/10.1063/1.3527089
    Collections
    • Electrical Engineering and Computer Science Scholarly Works [302]
    Citation
    Wang, Q., R. Hui, R. Dahal, J. Y. Lin, and H. X. Jiang. "Carrier Lifetime in Erbium-doped GaN Waveguide Emitting in 1540 Nm Wavelength." Appl. Phys. Lett. Applied Physics Letters 97.24 (2010): 241105. http://dx.doi.org/10.1063/1.3527089

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    Contact KU ScholarWorks
    785-864-8983
    KU Libraries
    1425 Jayhawk Blvd
    Lawrence, KS 66045
    785-864-8983

    KU Libraries
    1425 Jayhawk Blvd
    Lawrence, KS 66045
    Image Credits
     

     

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