Rafizadeh, NeemaAgunbiade, GbengaScott, RyanVieux, MoniqueZhao, Hui2025-01-242025-01-242025-01-24https://hdl.handle.net/1808/35807We report experimental evidence that MoSe2 and WS2 allows the formation of type-I and type-II interfaces, according to the thickness of the former. Heterostructure samples are obtained by stacking a monolayer WS2 flake on top of a MoSe2 flake that contains regions of thickness from 1 to 4 layers. Photoluminescence spectroscopy and transient absorption measurements reveal a type-II interface in the regions of monolayer MoSe2 in contact with monolayer WS2. In other regions of the heterostructure formed by multilayer MoSe2 and monolayer WS2, features of type-I interface are observed, including the absence of charge transfer and dominance of intralayer excitons in MoSe2. Coexistence of type-I and type-II interfaces in a single heterostructure offers opportunities to design sophisticated two-dimensional materials with finely controlled photocarrier behaviors.Copyright 2025, The AuthorsType-I and type-II interfaces in a MoSe2/WS2 van der Waals heterostructure (Dataset)Dataset10.17161/1808.35807https://orcid.org/0009-0001-7807-9041https://orcid.org/0000-0001-5924-4024https://orcid.org/0000-0003-4552-3836https://orcid.org/0009-0003-2301-4325https://orcid.org/0009-0007-8700-2429openAccess