Surface mobility near threshold and other parameters of insulated gate field effect transistors

Gnadinger, Alfred P.2015-04-242015-04-241970https://hdl.handle.net/1808/17512Includes bibliographical references (leaves 120-127).enThis item is protected by copyright and unless otherwise specified the copyright of this thesis/dissertation is held by the author.Field-effect transistorsElectrical engineeringSurface mobility near threshold and other parameters of insulated gate field effect transistorsThesisopenAccess