Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Wang, Q.Hui, RongqingDahal, R.Lin, J. Y.Jiang, Hongxing2015-11-132015-11-132010Wang, Q., R. Hui, R. Dahal, J. Y. Lin, and H. X. Jiang. "Carrier Lifetime in Erbium-doped GaN Waveguide Emitting in 1540 Nm Wavelength." Appl. Phys. Lett. Applied Physics Letters 97.24 (2010): 241105. http://dx.doi.org/10.1063/1.3527089https://hdl.handle.net/1808/18906This is the published version. Copyright 2010 American Institute of PhysicsWe report the characteristics of an erbium-doped GaNsemiconductorwaveguideamplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the I413/2 and I415/2 energy levels. The carrier lifetime in the I413/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.III-V semiconductorsFiber waveguidesOptical waveguidesCarrier lifetimesDopingCarrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelengthArticle10.1063/1.3527089openAccess