Surface mobility near threshold and other parameters of insulated gate field effect transistors

Gnadinger, Alfred P.

dc.contributor.author	Gnadinger, Alfred P.
dc.date.accessioned	2015-04-24T13:45:09Z
dc.date.available	2015-04-24T13:45:09Z
dc.date.issued	1970
dc.identifier.uri	http://hdl.handle.net/1808/17512
dc.description	Includes bibliographical references (leaves 120-127).	en_US
dc.language.iso	en	en_US
dc.publisher	University of Kansas	en_US
dc.rights	This item is protected by copyright and unless otherwise specified the copyright of this thesis/dissertation is held by the author.
dc.subject	Field-effect transistors	en_US
dc.subject	Electrical engineering	en_US
dc.title	Surface mobility near threshold and other parameters of insulated gate field effect transistors	en_US
dc.type	Thesis
dc.thesis.degreeDiscipline	Electrical Engineering
kusw.oapolicy	This item meets KU Open Access policy criteria.
kusw.bibid	1804458
dc.rights.accessrights	openAccess

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