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Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping
Hui, Rongqing Xie, Ruxin Feng, I. W. Sun, Z. Y. Lin, J. Y. Jiang, Hongxing
Hui, Rongqing
Xie, Ruxin
Feng, I. W.
Sun, Z. Y.
Lin, J. Y.
Jiang, Hongxing
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Abstract
Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10−21cm2 at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these waveguides are directly related to both the crystalline quality and the optical loss, and thus can be used as a material quality indicator.
Description
This is the published version. Copyright 2015 American Institute of Physics
Date
2014-08-04
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Publisher
American Institute of Physics
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Keywords
Fiber waveguides, Carrier lifetimes, III-V semiconductors, Erbium, Photonic crystal waveguides
Citation
Hui, R., R. Xie, I.-W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang. "Excitation Cross Section of Erbium-doped GaN Waveguides under 980 Nm Optical Pumping." Appl. Phys. Lett. Applied Physics Letters 105.5 (2014): 051106. http://dx.doi.org/10.1063/1.4892427