Type-I and type-II interfaces in a MoSe2/WS2 van der Waals heterostructure (Dataset)
Abstract
We report experimental evidence that MoSe2 and WS2 allows the formation of type-I and type-II interfaces, according to the thickness of the former. Heterostructure samples are obtained by stacking a monolayer WS2 flake on top of a MoSe2 flake that contains regions of thickness from 1 to 4 layers. Photoluminescence spectroscopy and transient absorption measurements reveal a type-II interface in the regions of monolayer MoSe2 in contact with monolayer WS2. In other regions of the heterostructure formed by multilayer MoSe2 and monolayer WS2, features of type-I interface are observed, including the absence of charge transfer and dominance of intralayer excitons in MoSe2. Coexistence of type-I and type-II interfaces in a single heterostructure offers opportunities to design sophisticated two-dimensional materials with finely controlled photocarrier behaviors.
Description
Date
2025-01-24
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Publisher
AIP Publishing