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Threshold voltage control in organic thin film transistors with dielectric layer modified by a genetically engineered polypeptide
Dezieck, Alex Acton, Orb Leong, Kirsty Oren, Ersin Emre Ma, Hong Tamerler, Candan Sarikaya, Mehmet Jen, Alex K.-Y.
Dezieck, Alex
Acton, Orb
Leong, Kirsty
Oren, Ersin Emre
Ma, Hong
Tamerler, Candan
Sarikaya, Mehmet
Jen, Alex K.-Y.
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Abstract
Precise control over the threshold voltage of pentacene-based organic thin film transistors was achieved by inserting a genetically engineered quartz-binding polypeptide at the semiconductor-dielectric interface. A 30 V range was accessed with the same peptide by adjusting the pH of the solution for peptide assembly while leaving other device properties unaffected. Mobility of 0.1–0.2 cm2 V−1 s−1 and on/off current ratio of >106 could be achieved for all devices regardless of the presence of the neutral peptide or the peptide assembled in acidic or basic conditions. This shift in threshold voltages is explained by the generation of charged species and dipoles due to variation in assembling conditions. Controlling device characteristics such as threshold voltage is essential for integration of transistors into electronic circuits.
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This is the published version. Copyright 2010 American Institute of Physics
Date
2010
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Publisher
American Institute of Physics
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Keywords
Peptides, Acids, Semiconductor surfaces, Dielectric devices, Dielectric thin films
Citation
Dezieck, Alex, Orb Acton, Kirsty Leong, Ersin Emre Oren, Hong Ma, Candan Tamerler, Mehmet Sarikaya, and Alex K.-Y. Jen. "Threshold Voltage Control in Organic Thin Film Transistors with Dielectric Layer Modified by a Genetically Engineered Polypeptide." Appl. Phys. Lett. Applied Physics Letters 97.1 (2010): 013307. http://dx.doi.org/10.1063/1.3459978