Loading...
GaN-based waveguide devices for long-wavelength optical communications
Hui, Rongqing Taherion, S. Wan, Yueting Li, Jilu Jin, Sixuan Lin, J. Y. Jiang, Hongxing
Hui, Rongqing
Taherion, S.
Wan, Yueting
Li, Jilu
Jin, Sixuan
Lin, J. Y.
Jiang, Hongxing
Citations
Altmetric:
Abstract
Refractive indices of AlxGa1−xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguidedevices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed.
Description
This is the published version. Copyright © 2003 American Institute of Physics
Date
2003
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Research Projects
Organizational Units
Journal Issue
Keywords
III-V semiconductors
Citation
Hui, R., S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang. "GaN-based Waveguide Devices for Long-wavelength Optical Communications." Appl. Phys. Lett. Applied Physics Letters 82.9 (2003): 1326. http://dx.doi.org/10.1063/1.1557790