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Ambipolar diffusion of photo-excited carriers in bulk GaAs
Ruzicka, Brian Andrew Werake, Lalani Kumari Samassekou, Hassana Zhao, Hui
Ruzicka, Brian Andrew
Werake, Lalani Kumari
Samassekou, Hassana
Zhao, Hui
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Abstract
The ambipolar diffusion of carriers in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a pointlike spatial profile are excited by a tightly focused pump laser pulse. The spatiotemporal dynamics of the carriers are monitored by a time-delayed and spatially scanned probe pulse. Ambipolar diffusion coefficients are deduced from linear fits to the expansion of the area of the profiles, and are found to decrease from about 170 cm2 s−1 at 10 K to about 20 cm2 s−1 at room temperature. Our results are consistent with those deduced from previously measured mobilities.
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Date
2010-12
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American Institute of Physics
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Materials Science
Citation
B.A. Ruzicka, L.K. Werake, H. Samassekou, and Hui Zhao, Ambipolar diffusion of photo-excited carriers in bulk GaAs, Applied Physics Letters 97, 262119 (2010)