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Memory effect on the multiphoton coherent destruction of tunneling in the electron transport of nanoscale systems driven by a periodic field: A generalized Floquet approach
Ho, Tak-San ; Hung, Shih-Han ; Chen, Hsing-Ta ; Chu, Shih-I
Ho, Tak-San
Hung, Shih-Han
Chen, Hsing-Ta
Chu, Shih-I
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Abstract
Time-dependent electron-transport processes are often studied in the wide-band limit. In this paper, a generalized Floquet approach beyond the wide-band limit is developed for the general treatment of memory effect on the virtually unexplored multiphoton (MP) coherent destruction of tunneling (CDT) phenomenon of periodically driven electrode-wire-electrode nanoscale systems. As a case study, we apply the approach for a detailed analysis of the electron-transport dc current in the electrode-quantum double dot-electrode system, showing the significance of memory effect as well as illustrating the origin of the MP-CDT phenomenon.
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This is the published version, also available here: http://dx.doi.org/10.1103/PhysRevB.79.235323.
Date
2009-06-22
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American Physical Society
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Ho, Tak-San., Hung, Shih-Han., Chen, Hsing-Ta., Chu, Shih-I. "Memory effect on the multiphoton coherent destruction of tunneling in the electron transport of nanoscale systems driven by a periodic field: A generalized Floquet approach." Phys. Rev. B 79, 235323 – Published 22 June 2009. http://dx.doi.org/10.1103/PhysRevB.79.235323.