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Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition
Wang, Q. Dahal, R. Feng, I. W. Lin, J. Y. Jiang, Hongxing Hui, Rongqing
Wang, Q.
Dahal, R.
Feng, I. W.
Lin, J. Y.
Jiang, Hongxing
Hui, Rongqing
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Abstract
We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber’s theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.
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This is the published version. ©Copyright 2011 American Institute of Physics
Date
2011
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American Institute of Physics
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Wang, Q., R. Dahal, I.-W. Feng, J. Y. Lin, H. X. Jiang, and R. Hui. "Emission and Absorption Cross-sections of an Er:GaN Waveguide Prepared with Metal Organic Chemical Vapor Deposition." Appl. Phys. Lett. Applied Physics Letters 99.12 (2011): 121106. http://dx.doi.org/10.1063/1.3636418